Navitas Showcases High-power Semiconductors For EV, Solar & Industrial At Next-Gen Munich Conference

Author: Benzinga Newsdesk | December 01, 2023 09:32am

Navitas Semiconductor (NASDAQ:NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, announced today its participation in and sponsorship of the ‘Bodo's WBG Event', taking place in Munich, Germany on December 12th and 13th, 2023.

Navitas is a pure-play wide bandgap (WBG) semiconductor supplier, having shipped 100 million GaN and 12 million SiC power devices. Navitas will showcase its latest technologies including Gen-4 GaNSense™ half-bridges optimized for motor drive, and Gen-3 Fast GeneSiC MOSFETs to drive growth in markets including EV, solar, energy storage, home appliance/industrial, and AI data center power.

Event Schedule:

• December 12th (times CET)
  • 4.00 pm: Roundtable: Addressing challenges in the adoption of SiC and GaN WBG materials, with Dr. Ranbir Singh, EVP GeneSiC, Navitas.
  • 5:30 pm: "Welcome Event" sponsored by Navitas.
    
    
    
     
• December 13th
  
  
  • 8:00 am – 5:00 pm: Exhibition: Navitas' next-gen GaNFast and GeneSiC technologies, with Nicola Franco, Field Applications Engineer, and Rob Weber, Sr. Director of Business Development.
  • 9:00 am: "GaN Power IC Innovations for High-Frequency, High-Power Industrial Motor Drive", by Alfred Hesener, Senior Director Industrial and Consumer Applications, Navitas.
    • GaN power ICs now cover the entire power range available from a single-phase AC grid, up to 3.5 kW in Europe, and 8 kW in China. The significant increase in switching frequency, up to 6 times higher than Si IGBTs, coupled with improved control-loop bandwidth, results in size reduction and superior dynamic performance. Negligible switching losses lead to higher efficiency across the frequency range, reducing total losses by 66% compared to legacy IGBT solutions. Furthermore, heatsinks can be reduced in size or even eliminated.
  • 10:15 am: "High-speed Gen-3 Fast GeneSiC Delivers Best-in-Class Efficiency from 300 – 800 kHz", by Dr. Ranbir Singh, EVP GeneSiC, Navitas.
    • Proprietary ‘trench-assisted planar gate technology' represents a no-compromise, next-gen upgrade compared to legacy planar and trench SiC. It provides the lowest RDS(ON) shift over temperature and the highest system efficiency in real-life operating conditions, including 300-800 kHz ZVS CCM. 100% avalanche testing, easy paralleling, and extended short-circuit withstand time combine to deliver a robust, reliable, long-term solution.

Bodo's WBG Event is scheduled to take place from December 12th-13th at the Hilton Munich Airport Hotel, Terminalstraße Mitte 20, 85356 München-Flughafen, Germany.

Posted In: NVTS